YBa₂Cu₃O{sub 7-x} 45° [001] tilt grain boundaries induced by controlled low-energy sputtering of MgO substrates [electronic resource] : Transport properties and atomic-scale structure.
Grain boundaries can act as weak links in the high {Tc} materials. If properly controlled, these grain boundaries can be used in various device applications. We have been able to reproducibly form 45° [001] tilt grain boundary junctions in YBa₂Cu₃0{sub 7-x} thin films. The films were grown on MgO su...
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Online Access |
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| Format: | Government Document Electronic eBook |
| Language: | English |
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Argonne, Ill. : Oak Ridge, Tenn. :
Argonne National Lab ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
1994.
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| Subjects: |
MARC
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| 245 | 0 | 0 | |a YBa₂Cu₃O{sub 7-x} 45° [001] tilt grain boundaries induced by controlled low-energy sputtering of MgO substrates |h [electronic resource] : |b Transport properties and atomic-scale structure. |
| 260 | |a Argonne, Ill. : |b Argonne National Lab ; |a Oak Ridge, Tenn. : |b distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, |c 1994. | ||
| 300 | |a 5 p. : |b digital, PDF file. | ||
| 336 | |a text |b txt |2 rdacontent. | ||
| 337 | |a computer |b c |2 rdamedia. | ||
| 338 | |a online resource |b cr |2 rdacarrier. | ||
| 500 | |a Published through the Information Bridge: DOE Scientific and Technical Information. | ||
| 500 | |a 10/01/1994. | ||
| 500 | |a "anl/msd/cp--82574" | ||
| 500 | |a " conf-941013--36" | ||
| 500 | |a "DE95005826" | ||
| 500 | |a ": Contract DMR 91-20000" | ||
| 500 | |a Applied superconductivity conference, Boston, MA (United States), 16-21 Oct 1994. | ||
| 500 | |a Dean, K.A.; Chang, R.P.H.; Merkle, K.L.; Marks, L.D.; Vuchic, B.V.; Funkhouser, J.W.; Bucholz, D.B. | ||
| 500 | |a USDOE, Washington, DC (United States);National Science Foundation, Washington, DC (United States) | ||
| 520 | 3 | |a Grain boundaries can act as weak links in the high {Tc} materials. If properly controlled, these grain boundaries can be used in various device applications. We have been able to reproducibly form 45° [001] tilt grain boundary junctions in YBa₂Cu₃0{sub 7-x} thin films. The films were grown on MgO substrates using a pre-growth substrate treatment. A low energy broad beam Argon ion source was used to irradiate a select region of (100) MgO substrates. The film on the milled portion of the substrate grows predominantly with a grain orientation rotated 45° about the c-axis with respect to the grain on the unmilled portion. Backscattered electron Kikuchi patterns have been used to confirm that the rotation occurs across the entire milled portion of the substrate. Transport properties of these films are discussed and related to high resolution electron microstructural and microchemical analyses of the grain boundaries. This technique has potential use in device applications as a method for controlled grain boundary engineering. | |
| 536 | |b W-31109-ENG-38. | ||
| 650 | 7 | |a Fabrication. |2 local. | |
| 650 | 7 | |a Grain Boundaries. |2 local. | |
| 650 | 7 | |a Sputtering. |2 local. | |
| 650 | 7 | |a Critical Current. |2 local. | |
| 650 | 7 | |a Yttrium Oxides. |2 local. | |
| 650 | 7 | |a Magnesium Oxides. |2 local. | |
| 650 | 7 | |a Temperature Range 0013-0065 K. |2 local. | |
| 650 | 7 | |a Temperature Range 0065-0273 K. |2 local. | |
| 650 | 7 | |a Barium Oxides. |2 local. | |
| 650 | 7 | |a Temperature Range 0000-0013 K. |2 local. | |
| 650 | 7 | |a Copper Oxides. |2 local. | |
| 650 | 7 | |a Substrates. |2 local. | |
| 650 | 7 | |a Electric Conductivity. |2 local. | |
| 650 | 7 | |a Current Density. |2 local. | |
| 650 | 7 | |a Materials Science. |2 edbsc. | |
| 710 | 2 | |a Argonne National Laboratory. |4 res. | |
| 710 | 1 | |a United States. |b Department of Energy. |b Office of Scientific and Technical Information. |4 dst. | |
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