YBa₂Cu₃O{sub 7-x} 45° [001] tilt grain boundaries induced by controlled low-energy sputtering of MgO substrates [electronic resource] : Transport properties and atomic-scale structure.
Grain boundaries can act as weak links in the high {Tc} materials. If properly controlled, these grain boundaries can be used in various device applications. We have been able to reproducibly form 45° [001] tilt grain boundary junctions in YBa₂Cu₃0{sub 7-x} thin films. The films were grown on MgO su...
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Format: | Government Document Electronic eBook |
Language: | English |
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Argonne, Ill. : Oak Ridge, Tenn. :
Argonne National Lab ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
1994.
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Internet
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Call Number: |
E 1.99: conf-941013--36
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E 1.99: conf-941013--36 | Available |