Fabrication of novel III-N and III-V modulator structures by ECR plasma etching [electronic resource]
Quantum well microdisk laser structures have been fabricated in the GaN/InGaN, GaAs/AlGaAs and GaAs/InGaP systems using a combination of ECR dry etching (Cl₂/CH₄/H₂/Ar, BCl₃/Ar or CH₄/H₂/Ar plasma chemistries respectively) and subsequent wet chemical etching of a buffer layer underlying the quantum...
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Online Access |
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| Format: | Government Document Electronic eBook |
| Language: | English |
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Albuquerque, N.M. : Oak Ridge, Tenn. :
Sandia National Laboratories. ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
1995.
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Internet
Online AccessOnline
| Call Number: |
E 1.99: conf-951155--11
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| E 1.99: conf-951155--11 | Available |