ECR etching of group-III nitride binary and ternary films

ECR etching of group-III nitride binary and ternary films [electronic resource]

Due to their wide band gaps and high dielectric constants, the group III-nitrides have made significant impact on the compound semiconductor community as blue and ultraviolet light emitting diodes (LEDs) and for their potential use in laser structures and high temperature electronics. Processing of...

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Bibliographic Details
Online Access: Online Access
Corporate Author: Sandia National Laboratories (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1995.
Subjects:
Processing.
Indium Nitrides.
Electron Cyclotron-resonance.
Temperature Dependence.
Gallium Nitrides.
Aluminium Nitrides.
Semiconductor Materials.
Plasma.
Roughness.
Microstructure.
Morphology.
Etching.
Materials Science.

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Call Number: E 1.99: conf-951007--4
E 1.99: conf-951007--4 Available

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