Spectroscopic ellipsometry and band structure of Si{sub 1-y}C{sub y} alloys grown pseudomorphically on Si (001)

Spectroscopic ellipsometry and band structure of Si{sub 1-y}C{sub y} alloys grown pseudomorphically on Si (001) [electronic resource]

The authors have measured the dielectric functions of three Si{sub 1-y}C{sub y} alloys layers (y {le} 1.4%) grown pseudomorphically on Si (001) substrates using molecular beam epitaxy at low temperatures. From the numerical derivatives of the measured spectra, they determine the critical point energ...

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Bibliographic Details
Online Access: Online Access
Corporate Author: Ames Laboratory (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1995.
Subjects:
Silicon Carbides.
Electronic Structure.
Ellipsometry.
Silicon.
Semiconductor Materials.
Band Theory.
Experimental Data.
Dielectric Properties.
Comparative Evaluations.
Materials Science.

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Call Number: E 1.99:CONF-950412--54
E 1.99:CONF-950412--54 Available

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