High rate dry etching of GaN, AlN and InN in ECR Cl₂/CH₄/H₂/Ar plasmas [electronic resource]
Etch rates for binary nitrides in ECR Cl₂/CH₄/H₂/Ar are reported as a function of temperature, rf-bias, microwave power, pressure and relative gas proportions. GaN etch rates remain relatively constant from 30 to 125°C and then increase to a maximum of 2340 Å-min⁻¹ at 170°C. The AlN etch rate decrea...
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Online Access |
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| Format: | Government Document Electronic eBook |
| Language: | English |
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Albuquerque, N.M. : Oak Ridge, Tenn. :
Sandia National Laboratories. ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
1995.
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Internet
Online AccessOnline
| Call Number: |
E 1.99: conf-950412--12
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| E 1.99: conf-950412--12 | Available |