Plasma etching of the Group-III nitrides

Plasma etching of the Group-III nitrides [electronic resource]

In reactive ion etching (RIE) of GaN, the ion bombardment can damage the material, so it is necessary to develop plasma etch processes. This paper reports etching of GaN in an ECR (electron cyclotron resonance) etch system using both the ECR/RIE mode and the RIE-only mode. Group III (Ga, In, Al) nit...

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Bibliographic Details
Online Access: Online Access
Corporate Author: Sandia National Laboratories (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1996.
Subjects:
Semiconductor Lasers.
Indium Nitrides.
Gallium Nitrides.
Semiconductor Devices.
Aluminium Nitrides.
Etching.
Materials Science.
Engineering Not Included In Other Categories.

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Call Number: E 1.99: conf-960502--3
E 1.99: conf-960502--3 Available

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