Comparison of dry-etch techniques for GaN, InN, and AlN

Comparison of dry-etch techniques for GaN, InN, and AlN [electronic resource]

FABRICATION OF GROUP III NITRIDE DEVICES RELIES ON THE ABILITY TO PATTERN FEATURES TO DEPTHS RANGING FROM 1000 A TO < 5 MICRONS WITH ANISOTROPIC PROFILES, SMOOTH MORPHOLOGIES, SELECTIVE ETCHING OF ONE MATERIAL OVER ANOTHER, AND A LOW DEGREE OF PLASMA INDUCED DAMAGE. IN THIS STUDY, GAN ETCH RATES...

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Bibliographic Details
Online Access: Online Access
Corporate Author: Sandia National Laboratories (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Dept. of Energy. Office of the Assistant Secretary, Management and Administration ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1997.
Subjects:
Indium Nitrides.
Comparative Evaluations.
Electron Cyclotron-resonance.
Gallium Nitrides.
Aluminium Nitrides.
Morphology.
Anisotropy.
Etching.
Scanning Electron Microscopy.
Cyclotron Resonance.
Materials Science.

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Call Number: E 1.99: conf-971201--
E 1.99: conf-971201-- Available

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