Cl₂-based dry etching of the AlGaInN system in inductively coupled plasmas

Cl₂-based dry etching of the AlGaInN system in inductively coupled plasmas [electronic resource]

Cl₂-based Inductively Coupled Plasmas with low additional dc self- biases(-100V) produce convenient etch rates(500-1500 A /min) for GaN, AlN, InN, InAlN and InGaN. A systematic study of the effects of additive gas(Ar, N₂, H₂), discharge composition and ICP source power and chuck power on etch rate a...

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Bibliographic Details
Online Access: Online Access
Corporate Author: Sandia National Laboratories (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Dept. of Energy. Office of the Assistant Secretary, Management and Administration ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1997.
Subjects:
Surface Properties.
Transistors.
Indium Nitrides.
Induction.
Plasma.
Argon.
Nitrogen.
Anisotropy.
Power.
Pressure Dependence.
Mixtures.
Chlorine.
Gallium Nitrides.
Aluminium Nitrides.
Hydrogen.
Coupling.
Morphology.
Nitrides.
Ions.
Etching.
Indium Compounds.
Materials Science.

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Call Number: E 1.99: conf-971201--
E 1.99: conf-971201-- Available

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