ICP dry etching of III-V nitrides [electronic resource]
Inductively coupled plasma etching of GaN, AlN, InN, InGaN and InAlN was investigated in CH₄/H₂/Ar plasmas as a function of dc bias, and ICP power. The etch rates were generally quite low, as is common for III-nitrides in CH₄ based chemistries. The etch rates increased with increasing dc bias. At lo...
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Online Access |
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| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Albuquerque, N.M. : Oak Ridge, Tenn. :
Sandia National Laboratories. ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
1997.
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Internet
Online AccessOnline
| Call Number: |
E 1.99: conf-970302--
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| E 1.99: conf-970302-- | Available |