The influence of ion induced damage on lateral charge collection and IBIC image contrast

The influence of ion induced damage on lateral charge collection and IBIC image contrast [electronic resource]

High resolution, calibrated ion beam induced charge (IBIC) measurements from integrated circuit test structures have demonstrated that the measured charge collection in a device can exhibit significant change after only a few hundred ions/μm² exposure, which may easily be exceeded in the initial tar...

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Bibliographic Details
Online Access: Online Access
Corporate Author: Sandia National Laboratories (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1997.
Subjects:
Diagnostic Techniques.
Charge Collection.
Integrated Circuits.
Physical Radiation Effects.
Mathematical Models.
Ion Beams.
Errors.
Microscopy.
Instrumentation, Including Nuclear And Particle Detectors.

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Call Number: E 1.99: conf-970785--1
E 1.99: conf-970785--1 Available

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