Atomic Resolution Microscopy of Semiconductor Defects and Interfaces [electronic resource]
The optical arrangement of the scanning transmission electron microscope (STEM) allows formation of incoherent images by use of a large annular detector. Here we show this capability in the imaging of defects in GaN and the interfacial region of an Au/GaAs ohmic contact. A resolution of around 0.15...
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Online Access |
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| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Washington, D.C : Oak Ridge, Tenn. :
United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
1999.
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| Subjects: |
| Summary: | The optical arrangement of the scanning transmission electron microscope (STEM) allows formation of incoherent images by use of a large annular detector. Here we show this capability in the imaging of defects in GaN and the interfacial region of an Au/GaAs ohmic contact. A resolution of around 0.15 nm is attained. Such Z-contrast images show strong atomic number contrast and allow the probe to be positioned accurately at the defect or interface for the purpose of performing high spatial resolution electron energy-loss spectroscopy (EELS) |
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| Item Description: | Published through the Information Bridge: DOE Scientific and Technical Information. 06/17/1999. "SAND99-1303C" Microscopy Semiconductor Materials Conference (Institute of Physics Conference Series), Oxford (GB), 03/22/1999--03/25/1999. James, E.M; Baca, A.G.; Reno, J.L.; Browning, N.D.; Xin, Y. |
| Physical Description: | 4 pages. |