Atomic Resolution Microscopy of Semiconductor Defects and Interfaces [electronic resource]
The optical arrangement of the scanning transmission electron microscope (STEM) allows formation of incoherent images by use of a large annular detector. Here we show this capability in the imaging of defects in GaN and the interfacial region of an Au/GaAs ohmic contact. A resolution of around 0.15...
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Online Access |
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| Format: | Government Document Electronic eBook |
| Language: | English |
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Washington, D.C : Oak Ridge, Tenn. :
United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
1999.
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Internet
Online AccessOnline
| Call Number: |
E 1.99:SAND99-1303C
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| E 1.99:SAND99-1303C | Available |