Electron beam induced damage in PECVD Si₃N₄ and SiO₂ films on InP [microform] / Dragan M. Pantic [and others] ; presented at the Dielectric Films on Compound Semiconductors Symposium sponsored by the Electrochemical Society, Honolulu, Hawaii, October 18-23, 1987.

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Bibliographic Details
Corporate Authors:	Electrochemical Society, United States. National Aeronautics and Space Administration, Symposium on Dielectric Films on Compound Semiconductors
Other Authors:	Pantic, Dragan M.
Format:	Government Document Conference Proceeding Microfilm Book
Language:	English
Published:	[Washington, D.C.] : Springfield, Va. : NASA ; For sale by the National Technical Information Service, [1990]
Series:	NASA technical memorandum ; 102544.
Subjects:	Capacitance-voltage characteristics. Electron beams. Indium phosphides. Irradiation. Phosphorus. Plasmas (physics) Radiation damage. Vapor deposition.

Electron beam induced damage in PECVD Si₃N₄ and SiO₂ films on InP / by Pantic, Dragan M.

Published 1990

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