Electron beam induced damage in PECVD Si₃N₄ and SiO₂ films on InP [microform] / Dragan M. Pantic [and others] ; presented at the Dielectric Films on Compound Semiconductors Symposium sponsored by the Electrochemical Society, Honolulu, Hawaii, October 18-23, 1987.

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Bibliographic Details
Corporate Authors: Electrochemical Society, United States. National Aeronautics and Space Administration, Symposium on Dielectric Films on Compound Semiconductors
Other Authors: Pantic, Dragan M.
Format: Government Document Conference Proceeding Microfilm Book
Language:English
Published: [Washington, D.C.] : Springfield, Va. : NASA ; For sale by the National Technical Information Service, [1990]
Series:NASA technical memorandum ; 102544.
Subjects:

MARC

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245 0 0 |a Electron beam induced damage in PECVD Si₃N₄ and SiO₂ films on InP  |h [microform] /  |c Dragan M. Pantic [and others] ; presented at the Dielectric Films on Compound Semiconductors Symposium sponsored by the Electrochemical Society, Honolulu, Hawaii, October 18-23, 1987. 
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490 1 |a NASA technical memorandum ;  |v 102544. 
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533 |a Microfiche.  |b [Washington, D.C. :  |c National Aeronautics and Space Administration],  |d 1990.  |e 1 microfiche : negative. 
650 7 |a Capacitance-voltage characteristics.  |2 nasat. 
650 7 |a Electron beams.  |2 nasat. 
650 7 |a Indium phosphides.  |2 nasat. 
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650 7 |a Phosphorus.  |2 nasat. 
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650 7 |a Radiation damage.  |2 nasat. 
650 7 |a Vapor deposition.  |2 nasat. 
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