Diffusion bonding of silicon carbide using iridium and hermetic silicon carbide-iridium bonds [electronic resource]
An exemplary method of bonding of silicon carbide and objects having a hermetic silicon carbide-iridium-silicon carbide bond. The method includes the steps of inserting an iridium foil between two SiC layers; heating the iridium foil and SiC layers at a temperature of 1500 C in a vacuum of <10?5...
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| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
West Mifflin, Pa. : Oak Ridge, Tenn. :
Bettis Atomic Power Laboratory ; Distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,
2019.
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| Call Number: |
E 1.99:10,406,774
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| E 1.99:10,406,774 | Available |