Nanoscale redox reaction at metal/oxide interface a case study on Schottky contact and ReRAM /

Nanoscale redox reaction at metal/oxide interface [electronic resource] : a case study on Schottky contact and ReRAM / Takahiro Nagata.

This book examines the investigation and intentional control of metal/oxide interface structure and electrical properties with the data obtained using non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR)

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Bibliographic Details
Online Access: Full Text (via Springer)
Main Author: Nagata, Takahiro
Format: Electronic eBook
Language:English
Published: Tokyo : Springer, 2020.
Series:NIMS monographs.
Subjects:
Oxidation-reduction reaction.

MARC

LEADER 00000cam a2200000xa 4500
001 b11027781
003 CoU
005 20200605063335.5
006 m o d
007 cr |||||||||||
008 200530s2020 ja ob 000 0 eng d
019 |a 1155886375 
020 |a 9784431548508  |q (electronic bk.) 
020 |a 4431548505  |q (electronic bk.) 
020 |z 9784431548492  |q (print) 
024 8 |a 10.1007/978-4-431-54 
035 |a (OCoLC)spr1155998398 
035 |a (OCoLC)1155998398  |z (OCoLC)1155886375 
037 |a spr978-4-431-54850-8 
040 |a EBLCP  |b eng  |c EBLCP  |d LQU  |d GW5XE 
049 |a GWRE 
050 4 |a QD63.O9 
100 1 |a Nagata, Takahiro. 
245 1 0 |a Nanoscale redox reaction at metal/oxide interface  |h [electronic resource] :  |b a case study on Schottky contact and ReRAM /  |c Takahiro Nagata. 
260 |a Tokyo :  |b Springer,  |c 2020. 
300 |a 1 online resource (95 pages) 
336 |a text  |b txt  |2 rdacontent. 
337 |a computer  |b c  |2 rdamedia. 
338 |a online resource  |b cr  |2 rdacarrier. 
490 1 |a NIMS Monographs. 
500 |a Description based upon print version of record. 
505 0 |a Intro -- Preface -- Acknowledgments -- Contents -- 1 General Introduction -- References -- 2 Changes in Schottky Barrier Height Behavior of Pt-Ru Alloy Contacts on Single-Crystal ZnO -- 2.1 Introduction -- 2.2 Interface Formation and Characterization -- 2.2.1 Schottky Barrier Height -- 2.2.2 Gibbs Free Energy: Ellingham Diagram -- 2.2.3 Phase Diagram -- 2.2.4 Characterization: Electrical Measurements -- 2.2.5 Characterization: X-Ray Photoelectron Spectroscopy -- 2.3 Combinatorial Synthesis of Binary Alloy Metal Contacts on Polar Face of ZnO -- 2.3.1 Crystal Structural Analysis. 
505 8 |a 2.3.2 Surface Morphology -- 2.3.3 Electrical Properties -- 2.3.4 Chemical Bonding States (HX-PES Measurements) -- 2.3.5 Surface Termination Effect -- 2.4 Summary -- References -- 3 Surface Passivation Effect on Schottky Contact Formation of Oxide Semiconductors -- 3.1 Introduction -- 3.2 Near-Atmospheric-Pressure Nitrogen Plasma Treatment -- 3.2.1 Atmospheric-Pressure Nitrogen Plasma Source -- 3.2.2 Nitridation of Oxide Surface -- 3.3 Near-Atmospheric-Pressure Nitrogen Plasma Passivation -- 3.3.1 Nitridation of ZnO Surface -- 3.3.2 Improvement of Metal/ZnO Interface -- References. 
505 8 |a 4 Bias-Induced Interfacial Redox Reaction in Oxide-Based Resistive Random-Access Memory Structure -- 4.1 Introduction -- 4.2 Nanoionic-Type ReRAM Structure -- 4.2.1 Sample Structure -- 4.2.2 Electrical Properties of Cu/HfO2/Pt Structure -- 4.3 HX-PES Measurements Under Bias Application -- 4.3.1 Cu/HfO2 Interface -- 4.3.2 Pt/HfO2 Interface -- 4.4 Filament Formation Process in Cu/HfO2/Pt and Pt/HfO2/Pt ReRAM Structures -- 4.5 Bias-Induced Cu Migration Behavior in Cu/HfO2 ReRAM Structure -- 4.6 Effect of Bottom Electrode on Interfacial Structure and Switching Behavior. 
505 8 |a 4.6.1 Electrical Properties of Pt/Cu/HfO2/Pt/Si and Pt/Cu/HfO2/TiN/Si Structures -- 4.6.2 Interfacial Structure Between Cu and HfO2 -- 4.6.3 Correlation Between Ion Migration and Switching Degradation -- 4.6.4 Effect of Bottom Electrode on Conductive Filament Formation -- 4.7 Summary -- References -- 5 Switching Control of Oxide-Based Resistive Random-Access Memory by Valence State Control of Oxide -- 5.1 Introduction -- 5.2 Valence Control Scheme -- 5.3 Combinatorial Synthesis -- 5.3.1 Ta-Nb Binary Oxide System -- 5.3.2 Valence State of Oxides -- 5.3.3 Electrical Properties -- 5.4 Summary. 
504 |a References -- 6 Combinatorial Thin-Film Synthesis for New Nanoelectronics Materials -- 6.1 Introduction -- 6.2 Combinatorial Thin-Film Synthesis -- 6.3 Focused Ar Ion-Beam Sputtering for Combinatorial Synthesis -- 6.3.1 Energy of Focused Ar Ion Beam Sputtering -- 6.3.2 Metal Thin-Film Growth on Oxide -- 6.3.3 Combinatorial Thin-Film Synthesis by FIBS -- 6.4 Combinatorial Characterization -- 6.4.1 Two-Dimensional X-Ray Diffraction Method -- 6.4.2 Atomic Force Microscopy-Based Electrical Property Mapping Method -- 6.5 Summary -- References -- 7 General Summary. 
504 |a Includes bibliographical references. 
520 |a This book examines the investigation and intentional control of metal/oxide interface structure and electrical properties with the data obtained using non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) 
650 0 |a Oxidation-reduction reaction.  |0 http://id.loc.gov/authorities/subjects/sh85096311. 
776 0 8 |i Print version:  |a Nagata, Takahiro  |t Nanoscale Redox Reaction at Metal/Oxide Interface : A Case Study on Schottky Contact and ReRAM  |d Tokyo : Springer,c2020  |z 9784431548492. 
830 0 |a NIMS monographs.  |0 http://id.loc.gov/authorities/names/n2014190016. 
856 4 0 |u https://colorado.idm.oclc.org/login?url=http://link.springer.com/10.1007/978-4-431-54850-8  |z Full Text (via Springer) 
907 |a .b110277818  |b 07-01-20  |c 06-10-20 
998 |a web  |b 06-30-20  |c b  |d b   |e -  |f eng  |g ja   |h 0  |i 1 
907 |a .b110277818  |b 06-30-20  |c 06-10-20 
944 |a MARS - RDA ENRICHED 
915 |a I 
956 |a Springer e-books 
956 |b Springer Chemistry and Materials Science eBooks 2020 English+International 
999 f f |i 624de023-f6e9-551b-a84a-d82dfb2ffcc5  |s e5aca1eb-3aa7-5844-9e7f-7b4bb4e0ab01 
952 f f |p Can circulate  |a University of Colorado Boulder  |b Online  |c Online  |d Online  |e QD63.O9  |h Library of Congress classification  |i Ebooks, Prospector  |n 1 

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