Gate-Controlled Metal?Insulator Transition in TiS<sub>3</sub> Nanowire Field-Effect Transistors [electronic resource]
We explore the electrical characteristics of TiS<sub>3</sub> nanowire field-effect transistor (FETs), over the wide temperature range from 3 to 350 K. These nanomaterials have a quasi-one-dimensional (1D) crystal structure and exhibit a gate-controlled metal?insulator transition (MIT) in...
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| Format: | Electronic eBook |
| Language: | English |
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Oak Ridge, Tenn. :
Distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,
2018.
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