Hole blocking, electron transporting and window layer for optimized CuIn(1?x)Ga(x)Se2 solar cells [electronic resource]
Thin-film photovoltaic devices and methods of their use and manufacture are disclosed. More particularly, polycrystalline CuIn(1-x)GaxSe2 (CIGS) based thin-film photovoltaic devices having independently tunable sublayers are disclosed. Also provided are methods of producing an n-doped graphene.
Saved in:
| Online Access: |
Full Text (via OSTI) |
|---|---|
| Corporate Author: | |
| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Upton, N.Y. : Oak Ridge, Tenn. :
Brookhaven National Laboratory ; Distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,
2019.
|
| Subjects: |
Internet
Full Text (via OSTI)Online
| Call Number: |
E 1.99:10,333,017
|
|---|---|
| E 1.99:10,333,017 | Available |