High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals [electronic resource]
Here, Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on d...
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| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Washington, D.C. : Oak Ridge, Tenn. :
United States. Office of the Assistant Secretary of Energy Efficiency and Renewable Energy ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,
2018.
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| Subjects: |
Internet
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| Call Number: |
E 1.99:nrel/ja--5900-71157
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| E 1.99:nrel/ja--5900-71157 | Available |