Electrical properties of indium arsenide nanowires and their field-effect transistors / Mengqi Fu.
This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in...
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| Online Access: |
Full Text (via Springer) |
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| Main Author: | |
| Format: | eBook |
| Language: | English |
| Published: |
Singapore :
Springer,
[2018]
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| Series: | Springer theses.
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| Subjects: |
Internet
Full Text (via Springer)Online
| Call Number: |
TK7874.85 .F82 2018
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| TK7874.85 .F82 2018 | Available |