Transient-induced latchup in CMOS integrated circuits /

Transient-induced latchup in CMOS integrated circuits / Ming-Dou Ker and Sheng-Fu Hsu.

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"Transient-Induced Latchup in CMOS Integrated Circuits equips the practicing engineer with all the tools needed to address this regularly occurring problem while becoming more proficient at IC layout. Ker and Hsu introduce the phenomenon and basic physical mechanism of latchup, explaining the c...

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Bibliographic Details
Online Access: Full Text (via ProQuest)
Main Author: Ker, Ming-Dou
Other Authors: Hsu, Sheng-Fu
Format: Electronic eBook
Language:English
Published: [Piscataway, NJ] : Singapore ; Hoboken, NJ : IEEE Press ; John Wiley & Sons (Asia), ©2009.
Subjects:
Metal oxide semiconductors, Complementary > Defects.
Metal oxide semiconductors, Complementary > Reliability.
Metal oxide semiconductors, Complementary > Defects
Metal oxide semiconductors, Complementary > Reliability

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Call Number: TK7871.99.M44 K47 2009
TK7871.99.M44 K47 2009 Available

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