Microelectronics, Microsystems and Nanotechnology : Papers Presented at MMN 2000, Athens, Greece, 20-22 November 2000 / editors, Androula G. Nassiopoulou, Xanthi Zianni.
This volume contains papers on the following: CMOS devices and devices based on compound semiconductors; processing; silicon integrated technology and integrated circuit design; quantum physics; nanotechnology; nanodevices, sensors and microsystems. Contemporary news and future challenges in these f...
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| Format: | Conference Proceeding eBook |
| Language: | English |
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World Scientific,
©2001.
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| 245 | 0 | 0 | |a Microelectronics, Microsystems and Nanotechnology : |b Papers Presented at MMN 2000, Athens, Greece, 20-22 November 2000 / |c editors, Androula G. Nassiopoulou, Xanthi Zianni. |
| 260 | |a New Jersey : |b World Scientific, |c ©2001. | ||
| 300 | |a 1 online resource (xvii, 390 pages) : |b illustrations. | ||
| 336 | |a text |b txt |2 rdacontent. | ||
| 337 | |a computer |b c |2 rdamedia. | ||
| 338 | |a online resource |b cr |2 rdacarrier. | ||
| 500 | |a "This volume contains the papers presented at the First Conference on "Microelectronics, Microsystems and Nanotechnology" ..."--Foreword. | ||
| 504 | |a Includes bibliographical references and index. | ||
| 505 | 0 | |a Foreword; CONTENTS; Nanotechnology and Quantum Devices; A New Strategy for In Situ Synthesis of Oligonucleotides Arrays for DNA Chip Technology; Magnetotransport Properties of La-Ca-Mn-O Multilayers; A Novel Method for the Calculation of the Local Electric Field at the Emitting Surface of a Carbon Single-Wall nanotube; Study of Photoluminescence and Micro-Photoluminesence of V-Shaped Quantum Wires; Catalytic Action of Ni Atoms in the Formation of Carbon Nanotubes: A Combined Ab-initio and Molecular Dynamics study; Si Nanocrystal MOS Memory Obtained by Low-Energy Ion Beam Synthesis. | |
| 505 | 8 | |a Charge Effects and Related Transport Phenomena in Nanosize Silicon/Insulator StructuresRadiative Recombination from Silicon Quantum Dots in Si/SiO2 Superlattices; Avalanche Porous Silicon Light Emitting Diodes for Optical Intra-Chip Interconnects; Infrared Absorption in Strained Si/Si1-xGex/Si Quantum Wells; Thermopower Calculations at Filling Factor 3/2 and 1/2 for Two-Dimensional Systems; Thermoelectric Properties of Composite Fermions; Design and Fabrication of Supported-Metal Catalysts Through Nanotechnology. | |
| 505 | 8 | |a Calculated Spontaneous Emission Rates in Silicon Quantum Wires Grown in {100} PlaneElectrical Modeling and Characterization of Si/SiO2 Superlattices; Ge/SiO2 Thin Layers Through Low-Energy Ge+ Implantation and Annealing: Nanostructure Evolution and Electrical Characteristics; Vertical Transport Mechanisms in nc-Si / CaF2 Multi-layers; Photo- and Electroluminescence from nc-Si / CaF2 Superlattices; Ab Initio Calculation of the Optical Gap in Small Silicon Nanoparticles; Ground State Electronic Structure of Small Si Quantum Dots; Processing; Technology Roadmap Challenges for Deep Submicron CMOS. | |
| 505 | 8 | |a Photolithographic Materials for Novel Biocompatible Lift Off ProcessesPolycrystalline Silicon Thin Film Transistors Having Gate Oxides Deposited Using TEOS; Solid Interface Studies with Applications in Microelectronics; A Comparison Between Point Defect Injecting Processes in Silicon Using Extended Defects and Dopant Marker Layers as Point Defect Detectors; Rapid Thermal Annealing of Arsenic Implanted Silicon for the Formation of Ultra Shallow n+p Junctions; Simulation of the Formation and Characterization of Roughness in Photoresists; F2 laser (157 nm) Lithography: Materials and Processes. | |
| 505 | 8 | |a Fabrication of Fine Copper Lines on Silicon Substrates Patterned with AZ 5214 Photoresist via Selective Chemical Vapor DepositionInvestigation of the Nitridation of Al2O3 (0001) Substrates by a Nitrogen Radio Frequency Plasma Source; Simulation of Si and SiO2 Feature Etching in Fluorocarbon Plasmas; Epitaxial ErSi2 on Strained and Relaxed Si1-x Gex; Development of a New Low Energy Electron Beam Lithography Simulation Tool; CMOS Devices and Devices Based on Compound Semiconductors; Advanced SOI Device Architectures for CMOS ULSI. | |
| 520 | |a This volume contains papers on the following: CMOS devices and devices based on compound semiconductors; processing; silicon integrated technology and integrated circuit design; quantum physics; nanotechnology; nanodevices, sensors and microsystems. Contemporary news and future challenges in these fields are presented in invited papers. | ||
| 588 | 0 | |a Print version record. | |
| 650 | 0 | |a Microelectronics. | |
| 650 | 0 | |a Microcomputers. | |
| 650 | 0 | |a Nanotechnology. | |
| 650 | 7 | |a Microcomputers. |2 fast |0 (OCoLC)fst01019642. | |
| 650 | 7 | |a Microelectronics. |2 fast |0 (OCoLC)fst01019757. | |
| 650 | 7 | |a Nanotechnology. |2 fast |0 (OCoLC)fst01032639. | |
| 700 | 1 | |a Zianni, Xanthi. | |
| 711 | 2 | 2 | |a Conference on "Microelectronics, Microsystems, and Nanotechnology" |n (1st : |d 2000 : |c Athens, Greece). |t Papers. |
| 776 | 0 | 8 | |i Print version: |a Conference on "Microelectronics, Microsystems, and Nanotechnology" (1st : 2000 : Athens, Greece). |t Microelectronics, Microsystems, and Nanotechnology. |d River Edge, N.J. : World Scientific, 2001 |z 9810247699 |z 9789810247690 |w (DLC) 2002278809 |w (OCoLC)50291241. |
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