Soft-error susceptibility of a CMOS RAM dependence upon power-supply voltage.

Soft-error susceptibility of a CMOS RAM [electronic resource] : dependence upon power-supply voltage.

Two types of delidded CMOS 1024 x 1 RAM (Harris HM 6508-RH and Sandia TA597) have been tested for susceptibility to soft bit errors caused by 150-MeV krypton ions. Bit-error susceptibility was measured as a function of bias voltage and exposure angle with respect to the chip normal. Comparison of me...

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Bibliographic Details
Online Access: Online Access
Main Authors: Koga, R (Author), Kolasinski, W A (Author), Blake, J B (Author), Diehl, S E (Author)
Corporate Author: Sandia National Laboratories (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Albuquerque, N.M. : Oak Ridge, Tenn. : Sandia National Laboratories. ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, 1982.
Subjects:
Integrated Circuits.
Physical Radiation Effects.
Semiconductor Storage Devices.
Errors.
Krypton Ions.
Mev Range 100-1000.
Charged Particles.
Electronic Circuits.
Energy Range.
Ions.
Memory Devices.
Mev Range.
Microelectronic Circuits.
Radiation Effects.
Semiconductor Devices.
Instrumentation Related To Nuclear Science And Technology.
Engineering.

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Call Number: E 1.99:sand-81-2140
E 1.99:sand-81-2140 Available

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