Ion Implanted Ge [electronic resource] : B Far Infrard Blocked Impurity BandDetectors.
Ge Blocked Impurity Band (BIB) photoconductors have the potential to replace stressed Ge:Ga photoconductors for far-infrared astronomical observations. A novel planar BIB device has been fabricated in which ion-implanted boron is used to form the blocking and absorbing layers of necessary purity and...
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Online Access |
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| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Washington, D.C. : Oak Ridge, Tenn. :
United States. Dept. of Energy. Office of Science ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
2006.
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| Subjects: |
MARC
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| 245 | 0 | 0 | |a Ion Implanted Ge |h [electronic resource] : |b B Far Infrard Blocked Impurity BandDetectors. |
| 260 | |a Washington, D.C. : |b United States. Dept. of Energy. Office of Science ; |a Oak Ridge, Tenn. : |b distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, |c 2006. | ||
| 336 | |a text |b txt |2 rdacontent. | ||
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| 500 | |a Published through the Information Bridge: DOE Scientific and Technical Information. | ||
| 500 | |a 06/12/2006. | ||
| 500 | |a "lbnl--60444" | ||
| 500 | |a Infrared Physics and Technology 51 1 FT. | ||
| 500 | |a Journal Publication Date: 2007. | ||
| 500 | |a Haller, E.E.; Beeman, J.W.; Goyal, S.; Reichertz, L.A. | ||
| 500 | |a National Aeronautics andSpace Administration. | ||
| 520 | 3 | |a Ge Blocked Impurity Band (BIB) photoconductors have the potential to replace stressed Ge:Ga photoconductors for far-infrared astronomical observations. A novel planar BIB device has been fabricated in which ion-implanted boron is used to form the blocking and absorbing layers of necessary purity and compensation. The effect of doping in the infrared active layer on the far-infrared photoconductive response has been studied, and the optimum doping concentration is found to be ≈ 4 x 10¹⁶ cm⁻³. Devices doped near this concentration show good blocking characteristics with low dark currents. The spectral response extends to ≈ 45 cm⁻¹, clearly showing the formation of an impurity band. Under low background testing conditions these devices attain a responsivity of 0.12 A/W and NEP of 5.23 x 10⁻¹⁵ W/Hz⁻¹² | |
| 536 | |b DE-AC02-05CH11231. | ||
| 536 | |b NASA:W-19,889. | ||
| 536 | |b 43DL01. | ||
| 650 | 7 | |a Testing. |2 local. | |
| 650 | 7 | |a Photoconductors. |2 local. | |
| 650 | 7 | |a Spectral Response. |2 local. | |
| 650 | 7 | |a Boron. |2 local. | |
| 710 | 2 | |a Lawrence Berkeley National Laboratory. |4 res. | |
| 710 | 1 | |a United States. |b Department of Energy. |b Office of Science. |4 spn. | |
| 710 | 1 | |a United States. |b Department of Energy. |b Office of Scientific and Technical Information. |4 dst. | |
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