APA (7th ed.) Citation

Lawrence Berkeley National Laboratory. (2006). Ion Implanted Ge: B Far Infrard Blocked Impurity BandDetectors. United States. Dept. of Energy. Office of Science ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.

Chicago Style (17th ed.) Citation

Lawrence Berkeley National Laboratory. Ion Implanted Ge: B Far Infrard Blocked Impurity BandDetectors. Washington, D.C. : Oak Ridge, Tenn.: United States. Dept. of Energy. Office of Science ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2006.

MLA (8th ed.) Citation

Lawrence Berkeley National Laboratory. Ion Implanted Ge: B Far Infrard Blocked Impurity BandDetectors. United States. Dept. of Energy. Office of Science ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2006.