Electrical and optical properties of carbon-doped GaN grown by MBE on MOCVD GaN templates using a CCl4 dopant source [electronic resource]
Carbon-doped GaN was grown by plasma-assisted molecular-beam epitaxy using carbon tetrachloride vapor as the dopant source. For moderate doping mainly acceptors were formed, yielding semi-insulating GaN. However at higher concentrations p-type conductivity was not observed, and heavily doped films (...
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Online Access |
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| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Washington, D.C. : Oak Ridge, Tenn. :
United States. Dept. of Energy. Office of Basic Energy Sciences ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
2002.
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Internet
Online AccessOnline
| Call Number: |
E 1.99:lbnl--52187
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| E 1.99:lbnl--52187 | Available |