Minority carrier diffusion, defects, and localization in InGaAsN with 2% nitrogen [electronic resource]
Electron and hole transport in compensated, InGaAsN (≈ 2% N) are examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements. Short minority carrier diffusion lengths, photoconductive-response spectra, and doping dependent, thermally activated Hall mobilities reveal...
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| Online Access: |
Online Access |
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| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Washington, D.C : Oak Ridge, Tenn. :
United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
2000.
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| Subjects: |
| Summary: | Electron and hole transport in compensated, InGaAsN (≈ 2% N) are examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements. Short minority carrier diffusion lengths, photoconductive-response spectra, and doping dependent, thermally activated Hall mobilities reveal a broad distribution of localized states. At this stage of development, lateral carrier transport appears to be limited by large scale (>> mean free path) material inhomogeneities, not a random alloy-induced mobility edge. |
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| Item Description: | Published through the Information Bridge: DOE Scientific and Technical Information. 05/03/2000. "sand2000-1115j" Applied Physics Letters FT. JONES,ERIC D.; KURTZ,STEVEN R.; SEAGER,CARLETON H.; ALLERMAN,ANDREW A.; SIEG,ROBERT M. |
| Physical Description: | 12 pages : digital, PDF file. |