Normal-state electronic properties of Sn/sub 0/ /sub 12/Eu/sub 1/ /sub 08/Mo/sub 6/S/sub 8/ at low temperature and high pressure [electronic resource]
The Hall coefficient and resistivity of Sn/sub 0/ /sub 12/Eu/sub 1/ /sub 08/Mo/sub 6/S/sub 8/ have been measured over the range 1.5 < T < 300 K under hydrostatic pressure up to 5.3 kbar. The data suggest thermally-activated conduction, but in all cases the carrier concentration saturates at ap...
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Online Access |
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| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Los Alamos, N.M. : Oak Ridge, Tenn. :
Los Alamos National Laboratory ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,
1981.
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| Subjects: |
MARC
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| 086 | 0 | |a E 1.99: conf-810809-11 | |
| 086 | 0 | |a E 1.99:la-ur-81-1044 | |
| 086 | 0 | |a E 1.99: conf-810809-11 | |
| 088 | |a conf-810809-11 | ||
| 088 | |a la-ur-81-1044 | ||
| 245 | 0 | 0 | |a Normal-state electronic properties of Sn/sub 0/ /sub 12/Eu/sub 1/ /sub 08/Mo/sub 6/S/sub 8/ at low temperature and high pressure |h [electronic resource] |
| 260 | |a Los Alamos, N.M. : |b Los Alamos National Laboratory ; |a Oak Ridge, Tenn. : |b distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, |c 1981. | ||
| 300 | |a Pages: 9 : |b digital, PDF file. | ||
| 336 | |a text |b txt |2 rdacontent. | ||
| 337 | |a computer |b c |2 rdamedia. | ||
| 338 | |a online resource |b cr |2 rdacarrier. | ||
| 500 | |a Published through SciTech Connect. | ||
| 500 | |a 01/01/1981. | ||
| 500 | |a "la-ur-81-1044" | ||
| 500 | |a " conf-810809-11" | ||
| 500 | |a 16. international conference on low temperature physics, Los Angeles, CA, USA, 19 Aug 1981. | ||
| 500 | |a Segall, B.; Luo, H.L.; Huang, C.Y.; Hambourger, P.D. | ||
| 520 | 3 | |a The Hall coefficient and resistivity of Sn/sub 0/ /sub 12/Eu/sub 1/ /sub 08/Mo/sub 6/S/sub 8/ have been measured over the range 1.5 < T < 300 K under hydrostatic pressure up to 5.3 kbar. The data suggest thermally-activated conduction, but in all cases the carrier concentration saturates at approx. 10/sup 22/ holes/cm/sup 3/ for T > 100 K. A band model is proposed which is qualitatively consistent with the data. | |
| 536 | |b W-7405-ENG-36. | ||
| 650 | 7 | |a Europium Sulfides. |2 local. | |
| 650 | 7 | |a Electric Conductivity. |2 local. | |
| 650 | 7 | |a Electronic Structure. |2 local. | |
| 650 | 7 | |a Superconductivity. |2 local. | |
| 650 | 7 | |a Molybdenum Sulfides. |2 local. | |
| 650 | 7 | |a Tin Sulfides. |2 local. | |
| 650 | 7 | |a Hall Effect. |2 local. | |
| 650 | 7 | |a Low Temperature. |2 local. | |
| 650 | 7 | |a Very Low Temperature. |2 local. | |
| 650 | 7 | |a Chalcogenides. |2 local. | |
| 650 | 7 | |a Electrical Properties. |2 local. | |
| 650 | 7 | |a Europium Compounds. |2 local. | |
| 650 | 7 | |a Molybdenum Compounds. |2 local. | |
| 650 | 7 | |a Physical Properties. |2 local. | |
| 650 | 7 | |a Rare Earth Compounds. |2 local. | |
| 650 | 7 | |a Sulfides. |2 local. | |
| 650 | 7 | |a Sulfur Compounds. |2 local. | |
| 650 | 7 | |a Tin Compounds. |2 local. | |
| 650 | 7 | |a Transition Element Compounds. |2 local. | |
| 650 | 7 | |a Materials Science. |2 edbsc. | |
| 710 | 2 | |a Los Alamos National Laboratory. |4 res. | |
| 710 | 1 | |a United States. |b Department of Energy. |b Office of Scientific and Technical Information. |4 dst. | |
| 856 | 4 | 0 | |u http://www.osti.gov/scitech/biblio/6207851 |z Online Access |
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