The optimization of interfaces in InAsSb/InGaAs strained-layer superlattices grown by metal-organic chemical vapor deposition [electronic resource]
We have prepared InAsSb/InGaAs strained-layer superlattice (SLS) semiconductors by metal-organic chemical vapor deposition (MOCVD) under a variety of conditions. Presence of an InGaAsSb interface layer is indicated by x-ray diffraction patterns. Optimized growth conditions involved the use of low pr...
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Online Access |
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| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Washington, D.C. : Oak Ridge, Tenn. :
United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
1993.
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| Subjects: |
MARC
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| 245 | 0 | 4 | |a The optimization of interfaces in InAsSb/InGaAs strained-layer superlattices grown by metal-organic chemical vapor deposition |h [electronic resource] |
| 260 | |a Washington, D.C. : |b United States. Dept. of Energy ; |a Oak Ridge, Tenn. : |b distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, |c 1993. | ||
| 300 | |a 6 p. : |b digital, PDF file. | ||
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| 500 | |a Published through the Information Bridge: DOE Scientific and Technical Information. | ||
| 500 | |a 12/31/1993. | ||
| 500 | |a "sand--93-2617c" | ||
| 500 | |a " conf-940411--9" | ||
| 500 | |a "DE94010070" | ||
| 500 | |a "GB0103012" | ||
| 500 | |a Spring meeting of the Materials Research Society (MRS),San Francisco, CA (United States),4-8 Apr 1994. | ||
| 500 | |a Kurtz, S.R.; Biefeld, R.M.; Baucom, K.C. | ||
| 520 | 3 | |a We have prepared InAsSb/InGaAs strained-layer superlattice (SLS) semiconductors by metal-organic chemical vapor deposition (MOCVD) under a variety of conditions. Presence of an InGaAsSb interface layer is indicated by x-ray diffraction patterns. Optimized growth conditions involved the use of low pressure, short purge times, and no reactant flow during the purges. MOCVD was used to prepare an optically pumped, single heterostructure InAsSb/InGaAs SLS/InPSb laser which emitted at 3.9 μm with a maximum operating temperature of approximately 100 K. | |
| 536 | |b AC04-94AL85000. | ||
| 650 | 7 | |a Semiconductor Lasers. |2 local. | |
| 650 | 7 | |a Gallium Arsenides. |2 local. | |
| 650 | 7 | |a Superlattices. |2 local. | |
| 650 | 7 | |a Indium Antimonides. |2 local. | |
| 650 | 7 | |a Indium Arsenides. |2 local. | |
| 650 | 7 | |a Heterojunctions. |2 local. | |
| 650 | 7 | |a Engineering. |2 edbsc. | |
| 710 | 2 | |a Sandia National Laboratories. |4 res. | |
| 710 | 1 | |a United States. |b Department of Energy. |4 spn. | |
| 710 | 1 | |a United States. |b Department of Energy. |b Office of Scientific and Technical Information. |4 dst. | |
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