The growth of InAsSb/InGaAs strained-layer superlattices by metal-organic chemical vapor deposition [electronic resource]
We have grown InAs{sub l-x}Sbâ‚“/In{sub 1-y}Ga{sub y}As strained-layer superlattice (SLS) semiconductors lattice matched to InAs using a variety of conditions by metal-organic chemical vapor deposition. The V/III ratio was varied from 2.5 to 10 at 475 C, at pressures of 200 to 660 torr and growth rate...
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| Format: | Government Document Electronic eBook |
| Language: | English |
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Washington, D.C. : Oak Ridge, Tenn. :
United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
1993.
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Internet
Online AccessOnline
| Call Number: |
E 1.99: conf-931108--48
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| E 1.99: conf-931108--48 | Available |