Observation of stimulated emission from an MBE grown GaN film on sapphire [electronic resource]
The authors report the first observation of optically pumped stimulated emission from an GaN epilayer at 77K and at room temperature grown by reactive ion-beam molecular beam epitaxy. The observed uv optical emission profile was a nonlinear function of the pump power density, with line narrowing at...
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Online Access |
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| Format: | Government Document Electronic eBook |
| Language: | English |
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Washington, D.C. : Oak Ridge, Tenn. :
United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
1993.
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Internet
Online AccessOnline
| Call Number: |
E 1.99: conf-9311138--1
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| E 1.99: conf-9311138--1 | Available |