Characteristics of GaSb and GaInSb layers grown by metalorganic vapor phase epitaxy [electronic resource]
GaInSb and GaSb layers have been grown on GaSb and GaAs substrates using metalorganic vapor phase epitaxy (MOVPE) with trimethylgallium, trimethylindium and trimethylantimony as the sources. As grown layers are p type with the carrier concentration in the mid 10¹⁶ cm⁻³ range. N type layers are grown...
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Online Access |
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| Format: | Government Document Electronic eBook |
| Language: | English |
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Washington, DC : Oak Ridge, Tenn. :
United States. Office of the Assistant Secretary for Nuclear Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
1995.
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Internet
Online AccessOnline
| Call Number: |
E 1.99:K--95085;CONF-9507247--
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| E 1.99:K--95085;CONF-9507247-- | Available |