Interfaces in InAsSb/InGaAs strained-layer superlattices grown by MOCVD for use in infrared emitters

Interfaces in InAsSb/InGaAs strained-layer superlattices grown by MOCVD for use in infrared emitters [electronic resource]

The authors have prepared InAsSb/InGaAs strained-layer superlattices (SLSs) using metal-organic chemical vapor deposition (MOCVD). X-ray diffraction was used to determine lattice matching as well as composition and structure of the SLSÌ€s. The presence of an InGaAsSb interface layer was indicated by...

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Bibliographic Details
Online Access: Online Access
Corporate Author: Sandia National Laboratories (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1995.
Subjects:
Experimental Data.
Interfaces.
Crystal Structure.
Uses.
Gallium Arsenides.
Arsenic Compounds.
Superlattices.
Indium Antimonides.
Chemical Vapor Deposition.
Indium Arsenides.
Heterojunctions.
Materials Science.

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Call Number: E 1.99: conf-950167--3
E 1.99: conf-950167--3 Available

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