The structure and morphology of semiconductor nanocrystals [electronic resource]

Colloidal semiconductor nanocrystals were studied using High Resolution Transmission Electron Microscopy (HRTEM). Organically capped nanocrystals were found to have faceted shapes consistent with Wulff polyhedra after the effects of capping ligands on surface energies were taken into account. The ba...

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Bibliographic Details
Online Access: Online Access (via OSTI)
Corporate Author: Lawrence Berkeley National Laboratory (Researcher)
Format: Government Document Thesis Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Department of Energy. Office of Energy Research ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, 1997.
Subjects:

MARC

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245 0 4 |a The structure and morphology of semiconductor nanocrystals  |h [electronic resource] 
260 |a Washington, D.C. :  |b United States. Department of Energy. Office of Energy Research ;  |a Oak Ridge, Tenn. :  |b distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,  |c 1997. 
300 |a 170 p. :  |b digital, PDF file. 
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500 |a 11/01/1997. 
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500 |a "DE98052649" 
500 |a Andreas V. Kadavanich. 
502 |a Thesis (Ph.D.); PBD: Nov 1997. 
520 3 |a Colloidal semiconductor nanocrystals were studied using High Resolution Transmission Electron Microscopy (HRTEM). Organically capped nanocrystals were found to have faceted shapes consistent with Wulff polyhedra after the effects of capping ligands on surface energies were taken into account. The basic shape thus derived for wurtzite (WZ) structure CdSe nanocrystals capped by tri-octyl phosphine oxide (TOPO) was a truncated hexagonal prism, elongated alone the <001> axis with (100) and (002) facets. This structure has C{sub 3v} point group symmetry. The main defect in this structure is a stacking fault (a single layer of zinc blende type stacking), which does not significantly affect the shape (does not alter the point group) 
536 |b AC03-76SF00098. 
650 7 |a Indium Phosphides.  |2 local. 
650 7 |a Cadmium Sulfides.  |2 local. 
650 7 |a Indium Arsenides.  |2 local. 
650 7 |a Semiconductor Materials.  |2 local. 
650 7 |a Morphology.  |2 local. 
650 7 |a Transmission Electron Microscopy.  |2 local. 
650 7 |a Crystal Defects.  |2 local. 
650 7 |a Cadmium Selenides.  |2 local. 
650 7 |a Materials Science.  |2 edbsc. 
710 2 |a Lawrence Berkeley National Laboratory.  |4 res. 
710 1 |a United States.  |b Department of Energy.  |b Office of Energy Research.  |4 spn. 
710 2 |a National Science Foundation (U.S.).  |4 spn. 
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