Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches [electronic resource]
The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 50 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer beneath the PCSS contacts which is very effective in the suppression of filament for...
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Online Access |
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| Format: | Government Document Electronic eBook |
| Language: | English |
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Washington, D.C : Oak Ridge, Tenn. :
United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
1999.
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Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches
Published 1999
Online Access
Government Document
Electronic
eBook