Future Trends in Microelectronics : frontiers and innovations / [edited by] Serge Luryi, Jimmy Xu, Alex Zaslavsky.

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Online Access: Full Text (via Wiley)
Corporate Author: Future Trends in Microelectronics (Conference) Corsica, France)
Other Authors: Luryi, Serge, Xu, Jimmy, Zaslavsky, Alex, 1963-
Other title:Frontiers and innovations
Format: Electronic Conference Proceeding eBook
Language:English
Published: Hoboken, New Jersey : Wiley, [2013]
Subjects:

MARC

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245 1 0 |a Future Trends in Microelectronics :  |b frontiers and innovations /  |c [edited by] Serge Luryi, Jimmy Xu, Alex Zaslavsky. 
246 3 0 |a Frontiers and innovations 
264 1 |a Hoboken, New Jersey :  |b Wiley,  |c [2013] 
300 |a 1 online resource 
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500 |a Papers from the seventh workshop in the Future Trends in Microelectronics series (FTM-7) with the theme "Into the Cross Currents," held on Corsica, June 2012. 
504 |a Includes bibliographical references and index. 
588 0 |a Print version record and CIP data provided by publisher. 
520 8 |a Annotation  |b Leaders in the field predict the future of the microelectronics industryThis seventh volume of Future Trends in Microelectronics summarizes and synthesizes the latest highlevel scientific discussions to emerge from the Future Trends in Microelectronics international workshop, which has occurred every three years since 1995. It covers the full scope of cuttingedge topics in microelectronics, from new physical principles (quantum computing, correlated electrons), to new materials (piezoelectric nanostructures, terahertz plasmas), to emerging device technologies (embedded magnetic memories, spin lasers, and biocompatible microelectronics). An ideal book for microelectronics professionals and students alike, this volume of Future Trends in Microelectronics:Identifies the direction in which microelectronics is headed, enabling readers to move forward with research in an informed, efficient, and profitable mannerIncludes twentynine contributor chapters by international authorities from leading universities, major semiconductor companies, and government laboratoriesProvides a unified, cohesive exploration of various trends in microelectronics, looking to future opportunities, rather than past successes. 
505 0 |a Half Title page; Title page; Copyright page; Preface; Acknowledgments; References; Part I: Innovations in Electronics and Systems; Technology Innovation, Reshaping the Microelectronics Industry; 1. Introduction; 2. Mainstream silicon technology: Memory; 3. Mainstream silicon technology: Logic; 4. Emerging computing architectures; 5. Silicon technology in the field of energy; 6. Silicon technology and nitride devices; 7. Silicon technology and photonics; 8. Silicon technology and medical or healthcare applications; 9. Future prospects; Acknowledgments; References. 
505 8 |a Challenges and Limits for Very Low Energy Computation1. Introduction; 2. Results and discussion; 3. Conclusions; Acknowledgments; References; Getting Rid of the DRAM Capacitor; 1. Introduction; 2. Origins of floating-body 1T-DRAMs; 3. Second coming of floating-body 1T-DRAMs; 4. Multi-body FB-1T-DRAMs; 5. Final remarks and conclusions; Acknowledgments; References; Physics and Design of Nanoscale Field Effect Diodes for Memory and ESD Protection Applications; 1. Introduction; 2. Structure and principle of operation of the FED; 3. FED as a memory cell; 3. FED as an ESD protection element. 
505 8 |a 4. ConclusionsAcknowledgments; References; Sharp-Switching CMOS-Compatible Devices with High Current Drive; 1. Introduction; 2. Enhancement of TFET ION using Si1-xGex and Ge channel materials; 3. Bipolar-enhanced TFET: BET-FET; 4. A feedback-based high-current sharp-switching device: Z2-FET; 5. Conclusions; Acknowledgments; References; Magnetic Tunnel Junctions with a Composite Free Layer: A New Concept for Future Universal Memory; 1. Introduction; 2. Magnetic memory technologies; 3. MTJs with a composite free layer; 4. Conclusions; Acknowledgments; References. 
505 8 |a Silicon Carbide High Temperature Electronics -- Is This Rocket Science?1. Introduction; 2. Advantages of SiC electronics; 3. Exploration of Venus; 4. Proposed system for Venus lander; 5. Results; 6. Conclusion; Acknowledgments; References; Microchip Post-Processing: There is Plenty of Room at the Top; 1. Introduction; 2. Adding functionality to CMOS; 3. Emerging microsystems; 4. Conclusions; Acknowledgments; References; EUV Lithography: Today and Tomorrow; 1. Introduction; 2. A very short history of EUVL; 3. Present of EUVL: Update on the current situation; 4. EUVL and alternatives: The future. 
505 8 |a 5. ConclusionsAcknowledgments; References; Manufacturability and Nanoelectronic Performance; 1. Introduction; 2. Manufacturability; 3. Reproducibility of artefacts made by top-down methods; 4. Reproducibility of artefacts made by bottom-up methods; 4. Consequent device performance limits; 5. Epitaxial control of layer thickness; 6. Zeolite pores as wires; 6. Conclusions; Acknowledgments; References; Part II: Optoelectronics in the Nano Age; Ultrafast Nanophotonic Devices for Optical Interconnects; 1. Introduction; 2. Vertical-cavity surface-emitting lasers. 
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700 1 |a Luryi, Serge.  |0 http://id.loc.gov/authorities/names/n96063022  |1 http://isni.org/isni/0000000115596757 
700 1 |a Xu, Jimmy.  |0 http://id.loc.gov/authorities/names/n96063026  |1 http://isni.org/isni/0000000116215610 
700 1 |a Zaslavsky, Alex,  |d 1963-  |0 http://id.loc.gov/authorities/names/nr91033753  |1 http://isni.org/isni/0000000117615296 
776 0 8 |i Print version:  |a Future Trends in Microelectronics (Conference) (7th : 2012 : Corsica, France).  |t Future Trends in Microelectronics.  |d Hoboken, New Jersey : John Wiley & Sons Inc., [2013]  |z 9781118442166  |w (DLC) 2013012720 
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