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|a GWRE
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|a TK7871.15.S56
|b S55 2010
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|a Silicon carbide.
|n Volume 1,
|p Growth, defects, and novel applications
|h [electronic resource] /
|c edited by Peter Friedrichs [and others]
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| 260 |
|
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|a Weinheim :
|b Wiley-VCH Verlag,
|c ©2010.
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| 300 |
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|a 1 online resource (xxii, 506 pages)
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|a Growth of SiC. Bulk Growth of SiC -- Review on Advances of SiC Vapor Growth for Improved Doping and Systematic Study on Dislocation Evolution / Sakwe Aloysius Sakwe, Mathias Stockmeier, Philip Hens, Ralf Muller, Desiree Queren, Ulrike Kunecke, Katja Konias, Rainer Hock, Andreas Magerl, Michel Pons, Albrecht Winnacker, Peter Wellmann -- Bulk and Epitaxial Growth of Micropipe-Free Silicon Carbide on Basal and Rhombohedral Plane Seeds / Boris M Epelbaum, Octavian Filip, Albrecht Winnacker -- Formation of Extended Defects in 4H-SiC Epitaxial Growth and Development of a Fast Growth Technique / Hidekazu Tsuchida, Masahiko Ito, Isaho Kamata, Masahiro Nagano -- Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects / Hiroyuki Nagasawa, Masayuki Abe, Kuniaki Yagi, Takamitsu Kawahara, Naoki Hatta -- Characterization of Defects and Material Properties. Identification of Intrinsic Defects in SiC: Towards an Understanding of Defect Aggregates by Combining Theoretical and Experimental Approaches / Michel Bockstedte, Adam Gali, Alexander Mattausch, Oleg Pankratov, John W Steeds -- EPR Identification of Intrinsic Defects in SiC / J Isoya, T Umeda, N Mizuochi, N T Son, E Janzen, T Ohshima -- Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide / Martin Rambach, Anton J Bauer, Heiner Ryssel -- Optical Properties of As-Grown and Process-Induced Stacking Faults in 4H-SiC / Jean Camassel, Sandrine Juillaguet -- Characterization of Defects in Silicon Carbide by Raman Spectroscopy / Martin Hundhausen, Roland Pusche, Jonas Ṟhrl, Lothar Ley -- Lifetime-Killing Defects in 4H-SiC Epilayers and Lifetime Control by Low-Energy Electron Irradiation / Tsunenobu Kimoto, Katsunori Danno, Jun Suda -- Identification and Carrier Dynamics of the Dominant Lifetime Limiting Defect in n 4H-SiC Epitaxial Layers / Paul B Klein -- Optical Beam Induced Current Measurements: Principles and Applications to SiC Device Characterization / Christophe Raynaud, Duy-Minh Nguyen, Nicolas Dheilly, Dominique Tournier, Pierre Brosselard, Mihai Lazar, Dominique Planson -- Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-SiC and their Application to Device Simulation / Tetsuo Hatakeyama -- Analysis of Interface Trap Parameters from Double-Peak Conductance Spectra Taken on N-Implanted 3C-SiC MOS Capacitors / M Krieger, S Beljakowa, L Trapaidze, T Frank, H B Weber, G Pensl, N Hatta, M Abe, H Nagasawa, A Schoner -- Non-Basal Plane SiC Surfaces: Anisotropic Structures and Low-Dimensional Electron Systems / Ulrich Starke -- Novel Applications. Comparative Columnar Porous Etching Studies on n-Type 6H SiC Crystalline Faces / Y Ke, R P Devaty, W J Choyke -- Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS / Christian A Zorman, Rocco J Parro -- Epitaxial Graphene: A New Material / Th Seyller, A Bostwick, K V Emtsev, K Horn, L Ley, J L McChesney, T Ohta, J D Riley, E Rotenberg, F Speck -- Density Functional Study of Graphene Overlayers on SiC / Oleg Pankratov, Alexander Mattausch.
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| 504 |
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|a Includes bibliographical references and index.
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| 588 |
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|a Print version record.
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|a Silicon carbide.
|0 http://id.loc.gov/authorities/subjects/sh85122519.
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|a Silicon carbide.
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|z Full Text (via Wiley)
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