Future trends in microelectronics. Journey into the unknown / edited by Serge Luryi, Jimmy Xu, Alexander Zaslavsky.

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Bibliographic Details
Online Access: Full Text (via IEEE)
Other Authors: Luryi, Serge (Editor), Xu, Jimmy (Editor), Zaslavsky, Alex, 1963- (Editor)
Format: eBook
Language:English
Published: Hoboken, New Jersey : John Wiley & Sons, 2016.
Subjects:
Table of Contents:
  • Cover ; Title Page ; Copyright ; Contents ; List of Contributors ; Preface ; Acknowledgments ; Part I Future of Digital Silicon; 1.1 Prospects of Future Si Technologies in the Data-Driven World; 1. Introduction ; 2. Memory
  • DRAM ; 3. Memory
  • NAND ; 4. Logic technology ; 5. CMOS image sensors ; 6. Packaging technology.
  • 7. Silicon photonics technology 8. Concluding remarks ; Acknowledgments ; References ; 1.2 How Lithography Enables Moore's Law; 1. Introduction ; 2. Moore's Law and the contribution of lithography ; 3. Lithography technology: past and present ; 4. Lithography technology: future ; 5. Summary.
  • 6. Conclusion Acknowledgments ; References ; 1.3 What Happened to Post-CMOS?; 1. Introduction ; 2. General constraints on speed and energy ; 3. Guidelines for success ; 4. Benchmarking and examples ; 5. Discussion ; 6. Conclusion ; Acknowledgments ; References.
  • 1.4 Three-Dimensional Integration of Ge and Two-Dimensional Materials for One-Dimensional Devices1. Introduction ; 2. FEOL technology and materials for 3D integration ; 3. Integration of ""more than Moore"" functionality ; 4. Implications of 3D integration at the system level ; 5. Conclusion ; Acknowledgments ; References.
  • 1.5 Challenges to Ultralow-Power Semiconductor Device Operation1. Introduction ; 2. Ultimate MOS transistors ; 3. Small slope switches ; 4. Conclusion ; Acknowledgments ; References ; 1.6 A Universal Nonvolatile Processing Environment; 1. Introduction ; 2. Universal nonvolatile processing environment.
  • 3. Direct bandgap GeSn light emitting diodes
  • 4. Group IV GeSn microdisk laser on Si(100)
  • 5. Conclusion and outlook
  • References
  • 2.7 Gallium Nitride-Based Lateral and Vertical Nanowire Devices
  • 1. Introduction
  • 2. Crystallographic study of GaN nanowires using TMAH wet etching
  • 3. Ω-shaped-gate lateral AlGaN/GaN FETs
  • 4. Gate-all-around vertical GaN FETs
  • 5. Conclusion
  • Acknowledgments
  • References
  • 2.8 Scribing Graphene Circuits
  • 1. Introduction
  • 2. Graphene oxide from graphite
  • 3. GO exfoliation
  • 4. Selective reduction of graphene oxide
  • 5. Raman spectroscopy
  • 6. Electrical properties of graphene oxide and reduced graphene oxide
  • 7. Future perspectives
  • Acknowledgments
  • References
  • 2.9 Structure and Electron Transport in Irradiated Monolayer Graphene
  • 1. Introduction
  • 2. Samples
  • 3. Raman scattering (RS) spectra
  • 4. Sample resistance
  • 5. Hopping magnetoresistance
  • References
  • 2.10 Interplay of Coulomb Blockade and Luttinger-Liquid Physics in Disordered 1D InAs Nanowires with Strong Spin-Orbit Coupling
  • 1. Introduction
  • 2. Sample preparation and the experimental setup
  • 3. Experimental results
  • 4. Conclusion
  • Acknowledgments
  • References
  • Part III Microelectronics in Health, Energy Harvesting, and Communications
  • 3.1 Image-Guided Intervention and Therapy: The First Time Right
  • 1. Introduction
  • 2. Societal challenge: Rapid rise of cardiovascular diseases
  • 3. Societal challenge: Rapid rise of cancer
  • 4. Drivers of change in healthcare
  • 5. Conclusion
  • Acknowledgments
  • References
  • 3.2 Rewiring the Nervous System, Without Wires
  • 1. Introduction
  • 2. Why go wireless-- 3. One wireless recording solution used to explore primary motor cortex control of locomotion.