| Call Number (LC) | Title | Results |
|---|---|---|
| TK7871.96.B55 M33 2008 | Measurement and modeling of silicon heterostructure devices | 2 |
| TK7871.96.B55 M35 2001 | Applications of silicon-germanium heterostructure devices / | 1 |
| TK7871.96.B55 M35 2001eb | Applications of silicon-germanium heterostructure devices | 1 |
| TK7871.96.B55 M67 1983 | Motorola small-signal transistors / | 1 |
| TK7871.96.B55 N48 1983 | The bipolar junction transistor / | 2 |
| TK7871.96.B55 O48 2013eb | SOI lubistors : lateral, unidirectional, bipolar-type insulated-gate transistors / | 1 |
| TK7871.96.B55 P65 1989 | Polysilicon emitter bipolar transistors / | 1 |
| TK7871.96.B55 R45 2003 | High-frequency bipolar transistors : physics, modelling, applications / | 1 |
| TK7871.96.B55 R83 2006 | Introduction to modeling HBTs / | 1 |
| TK7871.96.B55 S376 2010 | Compact hierarchical bipolar transistor modeling with hicum / | 1 |
| TK7871.96.B55 S376 2010eb | Compact hierarchical bipolar transistor modeling with HiCUM / | 2 |
| TK7871.96.B55 S53 2008 |
SiGe and Si strained-layer epitaxy for silicon heterostructure devices SiGe and Si strained-layer epitaxy for silicon heterostructure devices / |
3 |
| TK7871.96.B55 S54 2008 | Silicon heterostructure devices | 2 |
| TK7871.96.B55 S55 2005 | Silicon heterostructure handbook : materials, fabrication, devices, circuits, and applications of SiGe and Si strained-layer epitaxy / | 2 |
| TK7871.96.B55 .S555 2018eb | Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications | 2 |
| TK7871.96.B55 Y83 1999 |
SiGe, GaAs, and InP heterojunction bipolar transistors / SiGe, GaAs, and InP heterojunction biopolar transistors / |
2 |
| TK7871.96.M53 G74 2007 | RF and microwave transistor oscillator design / | 1 |
| TK7871.96.M53 G74 2007eb | RF and microwave transistor oscillator design | 1 |
| TK7871.96.M53 L68 | Low-noise microwave transistors & amplifiers / | 1 |
| TK7871.96.M53 M56 1991 | Microwave MESFETs and HEMTs / | 1 |
