| Call Number (LC) | Title | Results |
|---|---|---|
| TA1700 .H522 2009e | High-power diode laser technology and applications VII 26-27 January 2009, San Jose, California, United States / | 1 |
| TA1700 .H522 2010e | High-power diode laser technology and applications VIII 25-26 January 2010, San Francisco, California, United States / | 1 |
| TA1700 .H522 2011e | High-power diode laser technology and applications IX 23-25 January 2011, San Francisco, California, United States / | 1 |
| TA1700 .H522 2012e | High-power diode laser technology and applications X 22-24 January 2012, San Francisco, California, United States / | 1 |
| TA1700 .H522 2013e |
High-power diode laser technology and applications XII 2-4 February 2014, San Francisco, California, United States / High-power diode laser technology and applications XI : 3-5 February 2013, San Francisco, California, United States / |
2 |
| TA1700 .H522 2015c Online only | High-Power Diode Laser Technology and Applications XIII : 8-10 February 2015, San Francisco, California, United States / | 1 |
| TA1700 .H523 1997 | High-speed semiconductor lasers for communications : 10-11 February, 1997, San Jose, California / | 1 |
| TA1700 .H535 2007 | High power diode lasers : technology and applications / | 1 |
| TA1700 .H535 2007eb | High power diode lasers technology and applications / | 1 |
| TA1700 .H54 1988 | High power laser diodes and applications | 1 |
| TA1700 .H54 1996 | High-speed semiconductor laser sources : 1-2 February 1996, San Jose, California / | 1 |
| TA1700 .H548 1997 | High-speed semiconductor lasers for communication 10-11 February, 1997, San Jose, California / | 1 |
| TA1700 .H55 1996 | High-speed semiconductor laser sources 1-2 February 1996, San Jose, California / | 1 |
| TA1700 .I33 | IEEE International Semiconductor Laser Conference. | 1 |
| TA1700 .I49 1996 |
Process technology for semiconductor lasers : crystal growth and microprocesses / Process technology for semiconductor lasers crystal growth and microprocesses / |
2 |
| TA1700 .I54 1995 | Frequency stabilization of semiconductor laser diodes / | 1 |
| TA1700 .I559 1999 | In-plane semiconductor lasers III 27-29 January 1999, San Jose, California / | 1 |
| TA1700 .I5592 2000 | In-plane semiconductor lasers IV 24-25 January, 2000, San Jose, California / | 1 |
| TA1700 .I5593 2001 | In-plane semiconductor lasers V 22-23 January 2001, San Jose, USA / | 1 |
| TA1700 .I56 1997 | In-plane semiconductor lasers from ultraviolet to midinfrared : 10-13 February 1997, San Jose, California / | 1 |
