| Call Number (LC) | Title | Results |
|---|---|---|
| E 1.99:CONF-960493--17 | Performance of a two-mirror, four-reflection, ring-field optical system at λ=13 nm | 1 |
| E 1.99:CONF-960493--18 | Image degradation from surface scatter in EUV optics | 1 |
| E 1.99:CONF-960493--19 | Far-field radiation from a cleaved cylindrical dielectric waveguide | 1 |
| E 1.99:CONF-960493--20 | Applied grinding wheel performance evaluation for optical fabrication | 1 |
| E 1.99:conf-960496-- |
Proceedings An international workshop on offshore lease abandonment and platform disposal Technology, regulation, and environmental effects. Regulation and policy International trends and issues. International trends and issues Abandoning wells working group Abandoning pipelines working group regulatory issues Facilities removal working group Site clearance working group Habitat planning, maintenance and management working group Regulation and policy working group |
9 |
| E 1.99:CONF-960501--1 | Tribological performance of diamond and diamondlike carbon films at elevated temperatures | 1 |
| E 1.99: conf-960502--1 | TEOS surface chemistry on SiO₂ at CVD temperatures and pressures | 1 |
| E 1.99:conf-960502--2 | Dry etch development of W/WSi short Gate MESFETs | 1 |
| E 1.99: conf-960502--3 | Plasma etching of the Group-III nitrides | 1 |
| E 1.99: conf-960502--5 | Advanced fabrication technologies for nano-electronics | 1 |
| E 1.99: conf-960502--6 | Ion implantation in compound semiconductors for high-performance electronic devices | 1 |
| E 1.99: conf-960502--7 | Effect of hydrogen on Ca and Mg acceptors in GaN | 1 |
| E 1.99: conf-960502--8 | A two-dimensional numerical model of gas mixing and deposition in a rotating disk CVD reactor | 1 |
| E 1.99:CONF-960502--9 | New developments in fluorofullerenes chemistry | 1 |
| E 1.99: conf-960502--10 | In situ growth rate measurements by normal-incidence reflectance during MOVPE growth | 1 |
| E 1.99:CONF-960502--11 | Growth of silicon carbide on silicon via reaction of sublimed fullerenes and silicon | 1 |
| E 1.99:CONF-960502--12 | Electrochemical and in situ neutron diffraction investigations of La-Ni-Al-H alloys | 1 |
| E 1.99: conf-960502--13 | ECR, ICP, and RIE plasma etching of GaN | 1 |
| E 1.99:conf-960502--14 | On the pressure induced phase of Na₂CsC₆₀ | 1 |
| E 1.99:CONF-960502--15 | Modification of LiCl-LiBr-KBr electrolyte for LiAl/FeS₂ batteries | 1 |
